Ambipolar microcrystalline silicon transistors and inverters

被引：16

作者：

Chan, Kah-Yoong ^{[1
,2
]}

Knipp, Dietmar ^{[1
]}

Kirchhoff, Joachim ^{[2
]}

Gordijn, Aad ^{[2
]}

Stiebig, Helmut ^{[2
]}

机构：

[1] Jacobs Univ Bremen, Sch Engn & Sci, D-28759 Bremen, Germany

[2] Forschungszentrum Julich, Photovolta IEF5, D-52425 Julich, Germany

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 06期

关键词：

TFTs; Microcrystalline silicon; Ambipolar transistor; Ambipolar inverter; THIN-FILM TRANSISTORS; HYDROGENATED AMORPHOUS-SILICON; SOLAR-CELLS;

D O I：

10.1016/j.sse.2009.04.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated microcrystalline silicon (mu c-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition at low deposition temperature of 160 degrees C. The electrical parameters of the ambipolar microcrystalline silicon TFTs and inverters will be described. The influence of contact effects on the operation of ambipolar microcrystalline silicon TFTs was investigated. Furthermore, the influence of the ambipolar transistor characteristics on the performance of the ambipolar inverter will be discussed. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：635 / 639

页数：5

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