New EXAFS measurements by XEOL and TEY on porous silicon

Results of an EXAFS investigation on porous Silicon carried out by X-ray Excited Optical Luminescence (XEOL) and Total Electron Yield (TEY) techniques, at the Si K absorption edge, are reported. For the first time XEOL spectra of porous silicon have been recorded in a wide energy range (1800-2500 eV) and EXAFS signals have been singled out from them. Simultaneous TEY and XEOL measurements yield to different results: in particular TEY-EXAFS is sensitive up to the third coordination shell of Si, while XEOL-EXAFS reveals only the contributions of the first two coordination shells; moreover they show a different dependence on changes of the etching parameters. This evidences the sensitivity of XEOL technique to the local structure of the quantum confined luminescent sites. The dependence of the light emission properties on the main preparation parameters and their influence on the short-range structure of red and yellow porous silicon samples are also investigated.