Application of Taguchi method to optimize the sol-gel dip-coating process of the semiconductor Cu2ZnSnS4 with good optical properties

被引:10
作者
Ziti, Ahmed [1 ,2 ]
Hartiti, Bouchaib [1 ]
Labrim, Hicham [3 ]
Fadili, Salah [1 ]
Tahri, Mounia [4 ]
Belafhaili, Amine [5 ]
Ridah, Abderraouf [2 ]
Thevenin, Philippe [6 ]
机构
[1] Hassan II Univ Casablanca, MEEM & DD Grp, ERDyS Lab, FSTM BP 146, Mohammadia 20650, Morocco
[2] Hassan II Univ Casablanca, Dept Phys FSB, LIMAT Lab, BP 7955, Casablanca, Morocco
[3] Mat Sci Unit DRES CNESTEN, Rabat, Morocco
[4] UGPC DSTE DERS CNESTEN, Rabat, Morocco
[5] Mohammed V Univ, Fac Sci, Ctr Electron Microscopy, Rabat, Morocco
[6] Univ Lorraine, LMOPS, Metz, France
关键词
Cu2ZnSnS4; Sol-gel; Dip coating; Taguchi method; ANOVA; Optical bandgap; CZTS THIN-FILMS; DEPOSITION; FABRICATION; PARAMETERS; CELLS; QUALITY; SULFURIZATION; DESIGN; ROUTE;
D O I
10.1007/s10971-019-05040-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper presents the optimal configuration of parameters for the elaborated Cu2ZnSnS4 (CZTS) absorber layer, using the sol-gel method associated with dip-coating technique on ordinary glass substrates. Taguchi design of experiments with L-27 (3(8)) orthogonal array, a signal-to-noise (S/N) ratio, and an analysis of variance (ANOVA) were used to determine the best optical properties for photovoltaic applications (optical bandgap energy) of CZTS thin films. Eight factors named annealing temperature, Cu/(Zn+Sn) ratio, Zn/Sn ratio, S/metal ratio, number of pre-annealing and dip coating, dip-coating cycle, annealing time, and dip-coating speed were chosen. To conduct the tests, we apply Taguchi method; three levels were fixed for each factor. The most important factors of the deposition approach on the optical properties of the fixed as-synthesized CZTS films were determined. The analysis of the obtained results indicated that the important parameters are the Zn/Sn ratio and annealing temperature in air by employing Taguchi approach. A validation test is also carried out to check whether the found optimal combinations of the parameter are correct. CZTS thin-film synthesis with optimal conditions has been characterized, using an X-ray diffractometer (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), UV-visible spectrophotometer, and four-point probe method. XRD data show a kesterite structure with a preferential orientation along the (112) plan; UV-visible spectrophotometer indicated that the bandgap energy of the CZTS thin film is 1.51eV and a cross section showed the suitable film thickness in the order of similar to 1.80 mu m. [GRAPHICS] . HighlightsSynthesis of CZTS thin films by sol gel associated to the dip-coating technique.Application of Taguchi method to optimize the sol gel dip-coating process of the semiconductor CZTS with good optical properties.The statistical analysis (ANOVA) has the capacity to give information about certain statistical parameters.The CZTS thin film elaborated with optimal parameters has good morphological optical and electrical properties.
引用
收藏
页码:364 / 373
页数:10
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