Towards understanding the emission efficiency of nitride quantum wells

被引：81

作者：

Hangleiter, A ^{[1
]}

Fuhrmann, D ^{[1
]}

Grewe, M ^{[1
]}

Hitzel, F ^{[1
]}

Klewer, G ^{[1
]}

Lahmann, S ^{[1
]}

Netzel, C ^{[1
]}

Riedel, N ^{[1
]}

Rossow, U ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Phys Tech Inst, D-38106 Braunschweig, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high quantum efficiency of light emission from GaInN/GaN quantum wells despite the typically large defect density still lacks a quantitative explanation. From a detailed analysis of the efficiency of highly efficient samples we find that a reduction of the radiative probability due to free exciton dissociation is the dominant mechanism limiting the quantum efficiency. Random exciton localization is shown to be only a minor contribution.

引用

页码：2808 / 2813

页数：6

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