Colour centers in doped Gd3Ga5O12 and Y3Al5O12 laser crystals

被引：29
|
作者：
Matkovskii, A
Sugak, D
Melnyk, S
Potera, P
Suchocki, A
Frukacz, Z
机构：
[1] HPS, Inst Phys, PL-35310 Rzeszow, Poland
[2] State Univ Lvivska Politechnika, UA-290646 Lviv, Ukraine
[3] SRC Carat, Inst Mat, UA-290031 Lviv, Ukraine
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[5] Inst Elect Mat Technol, Warsaw, Poland
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2000年 / 300卷
关键词：
colour centers; Gd3Ga5O12; Y3Al5O12; radiation defects;
D O I：
10.1016/S0925-8388(99)00771-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of rare earth and 3d impurities on the process of ionizing recharge of genetic defects under gamma-irradiation in Gd3Ga5O12 and Y3Al5O12 laser crystals has been studied by absorption spectroscopy. Impurities with stable trivalent states (Nd3+, Er3+ Sm3+, etc) do not change the character of absorption spectra of the colour centers formed during gamma-irradiation. Impurities (Cr, Fe, Ce) which can easily change valency during irradiation, compete with growth defects in trapping of the charge carriers generated by irradiation. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：395 / 397
页数：3
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