Fabrication of Highly Crystalline Corundum-Structured α-(Ga1-xFex)2O3 Alloy Thin Films on Sapphire Substrates

被引：99

作者：

Kaneko, Kentaro ^{[1
,2
]}

Nomura, Taichi ^{[1
,2
]}

Kakeya, Itsuhiro ^{[1
]}

Fujita, Shizuo ^{[2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158520, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; CHEMICAL-VAPOR-DEPOSITION; HIGH-TEMPERATURE; GROWTH; OXIDATION; CR2O3;

D O I：

10.1143/APEX.2.075501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly crystalline corundum-structured alpha-(Ga1-xFex)(2)O-3 alloy thin films were fabricated on c-plane sapphire substrates by using a mist chemical vapor deposition method. The full-widths at half maximum of X-ray diffraction rocking curves were smaller than 100 arcsec for the entire range of x from 0 to 1. Optical band gaps were artificially tuned to a value between those of alpha-Ga2O3 and alpha-Fe2O3, that is, 2.2 and 5.3 eV with changing the Fe content x in the films. Magnetic measurements revealed ferromagnetic properties of a alpha-(Ga1-xFex)(2)O-3 (x=0.24) thin film at 110 K. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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