Ammonia-Sensing Using a Composite of Graphene Oxide and Conducting Polymer

被引:36
|
作者
Hasani, Amirhossein [1 ]
Dehsari, Hamed Sharifi [2 ]
Lafmejani, Milad Asghari [3 ]
Salehi, Alireza [3 ]
Taromi, Faramarz Afshar [4 ]
Asadi, Kamal [2 ]
Kim, Soo Young [1 ]
机构
[1] Chung Ang Univ, Sch Chem Engn & Mat Sci, 84 Heukseok Ro, Seoul 06974, South Korea
[2] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[3] KN Toosi Univ Technol, Dept Elect Engn, Tehran 163151355, Iran
[4] Amirkabir Univ Technol, Dept Polymer Engn & Color Technol, POB 15875-4413, Tehran, Iran
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2018年 / 12卷 / 05期
基金
新加坡国家研究基金会;
关键词
ammonia sensors; GaAs; graphene oxide; PEDOT:PSS; Schottky diodes; LITHIUM-ION BATTERIES; HOLE TRANSPORT LAYER; SCHAFER THIN-FILMS; GAS SENSORS; PERFORMANCE; HETEROJUNCTION; NANOCOMPOSITE; PEDOTPSS; CARBON; POLY(3,4-ETHYLENEDIOXYTHIOPHENE)-POLY(STYRENESULFONATE);
D O I
10.1002/pssr.201800037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The paper studies the performance of a gas sensor based on an organic/inorganic diode for ammonia (NH3) sensing under atmospheric conditions at room temperature and different humidity levels. The diode structure consists of a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) deposited on top of n-type GaAs. The PEDOT:PSS layer that is filled with different ratios of graphene oxide (GO) is prepared from the solution phase. We show that the current-voltage (I-V) response of the diode and the sensing performance improve significantly by adding GO to the PEDOT:PSS layer. The sensing response is highest for a diode with 0.04wt.% of GO. At room temperature, the PEDOT:PSS:GO (0.04wt.%)/n-GaAs Schottky diode shows a sensitivity of 194 upon exposure to 20ppm of NH3 with rapid response and recovery times between 95 and 121s, respectively. The NH3 sensor based on PEDOT:PSS:GO is cost-effective, environmentally friendly, and easy to fabricate using low-cost solution-processing methods.
引用
收藏
页数:7
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