Diamond composites with TiC, SiC and Ti3SiC2 bonding phase

被引：17

作者：

Jaworska, L ^{[1
]}

机构：

[1] Inst Met Cutting, Dept Mat Engn, PL-30011 Krakow, Poland

来源：

HIGH PRESSURE RESEARCH | 2002年 / 22卷 / 3-4期

关键词：

diamond composites; carbide bonding phases; microstructure; mechanical properties; wear resistance;

D O I：

10.1080/08957950212434

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The problems connected with producing diamond composites with 30 wt.% of bonding phase in form of. SiC, TiC, and Ti3SiC2 are presented in the paper. Increasing the fraction of the bonding phase within the composite generally helps to reduce internal stresses. Composites were sintered at pressure 8.0+/-0.2 GPa and temperature of 2070 50 K using the Bridgman type high pressure apparatus. Interactions in the diamond-SiC, the diamond-TiC, and the diamond-Ti3SiC2 systems were studied by means of transmission electron microscope (TEM) and X-ray diffraction. Density was measured pyenometrically, The wear resistance studies of these composites were carried out using pin - on disc type laboratory equipment. Hardness was measured with Vickers apparatus. Results of measurements of physical and mechanical properties are reported.

引用

页码：531 / 533

页数：3