Conduction mechanism for sputtered a-C:H based structures

被引：4

作者：

Lazar, I. ^{[1
]}

Lazar, G. ^{[1
]}

机构：

[1] Bacau Univ, Bacau 600115, Romania

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 21-22期

关键词：

electrical and electronic properties;

D O I：

10.1016/j.jnoncrysol.2006.02.044

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures fabricated by magnetron sputtering deposition of insulating hydrogenated amorphous carbon are analyzed by measuring their current-voltage characteristics in order to find the conduction mechanism. For MIM structures, the linearity of the logarithmic dependencies between current density and electric field intensity (log J-Iog E) for higher fields indicate a space charge limited current (SCLC) conduction mechanism. The calculated values of the effective mobility are in agreement with other literature results. For MIS structures, the power-law dependence between current and voltage also indicate a space-charge limited currents based conduction mechanism. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2096 / 2099

页数：4

共 29 条

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