High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

被引：6

作者：

Peng, Ping Chun ^{[1
]}

Chen, Yu-Zheng ^{[1
]}

Hsiao, Woan Yun ^{[2
]}

Chen, Kuang-Hsin ^{[2
]}

Lin, Ching-Pin ^{[2
]}

Tien, Bor-Zen ^{[2
]}

Chang, Tzong-Sheng ^{[2
]}

Lin, Chrong Jung ^{[1
]}

King, Ya-Chin ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Taiwan Semicond Mfg Co, Proc Integrat Div, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 10期

关键词：

Anti-fuse OTP; FinFET; high-k dielectric breakdown; logic NVM; CMOS; CONTACT; FUSE;

D O I：

10.1109/LED.2015.2472300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The one-time programmable (OTP) cell with intra-Fin-cell-isolation (IFCI) on the FinFET high-k metal gate (HKMG) CMOS process is proposed and demonstrated. The field-enhanced dielectric breakdown at Fin corners enables this OTP cell to be operated at low program voltage with fast program speed. The new intra-Fin cell-to-cell isolation eliminates the required wide spacing in the conventional isolation schemes, which successfully shields the neighboring cells from program and read disturbs. Without introducing extra masks or process steps, the CMOS compatible IFCI OTP cell achieves an ultrasmall cell size of 0.076 mu m(2). More than six orders of ON-/OFF-read window is achieved under 4 V programming within 20 mu s.

引用

页码：1037 / 1039

页数：3

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