Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

被引：24
|
作者：
Bietti, Sergio [1 ,2 ]
Scaccabarozzi, Andrea [1 ,2 ]
Frigeri, Cesare [3 ]
Bollani, Monica [4 ]
Bonera, Emiliano [1 ,2 ]
Falub, Claudiu V. [5 ]
von Kanel, Hans [5 ]
Miglio, Leo [1 ,2 ]
Sanguinetti, Stefano [1 ,2 ]
机构：
[1] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
[2] Univ Milano Bicocca, Dip Sci Mat, I-20125 Milan, Italy
[3] CNR IMEM Inst, I-43100 Parma, Italy
[4] L NESS, CNR IFN, I-22100 Como, Italy
[5] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 26期
关键词：
QUANTUM-DOT LASERS; SILICON PHOTONICS; HETEROEPITAXY; MISFIT; DISLOCATIONS; MICROSCOPY; CONVERSION; CRYSTALS; EPITAXY; SURFACE;
D O I：
10.1063/1.4857835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing. (C) 2013 AIP Publishing LLC.
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页数：5
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