SiC nanowires in large quantities: Synthesis, band gap characterization, and photoluminescence properties

被引：59

作者：

Chiu, Sheng-Cheng ^{[1
]}

Li, Yuan-Yao ^{[1
]}

机构：

[1] Natl Chung Cheng Univ, Dept Chem Engn, Chiayi 621, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 04期

关键词：

Growth models; Nanostructure; Chemical vapor deposition process; Nanomaterials; Semiconducting silicon compounds; SILICON-CARBIDE NANOWIRES; LARGE-SCALE SYNTHESIS; CARBON NANOTUBES; COAXIAL NANOCABLES; NANORODS; GROWTH; ELECTRON; ARRAYS;

D O I：

10.1016/j.jcrysgro.2008.11.099

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Silicon carbide nanowires (SiCNWs) were synthesized in large quantity using a thermal process with carbon nanotube (CNT)/Si-SiO2 (carbon nanotubes grown on Si-SiO2 core-shell substrates) at 1300 degrees C in an argon atmosphere. The characterization shows that the SiCNWs covered with a thin layer of amorphous SiO2 had diameters of 30-70 nm and lengths of 4-10 mu m. The growth mechanism of the SiCNWs is proposed to be the combination of the chemical vapor deposition (CVD) method and the CNTs confined reaction method. According to the Kubelka-Munk plot, the band gap energy for the SiCNWs was 2.8 eV. The Mott-Schottky plot shows that the flat-band potential of the SiCNWs was -0.46V versus NHE and that the material exhibited n-type conductivity. The photoluminescence analysis of the SiCNWs revealed two wide bands of emission peaks centered at about 390 and 470 nm (CIE value: x=0.18, y=0.24). (C) 2008 Published by Elsevier B.V

引用

页码：1036 / 1041

页数：6

共 62 条

[41] Electronic and structural properties of silicon carbide nanowires [J].

Rurali, R .

PHYSICAL REVIEW B, 2005, 71 (20)

[42] Direct growth of core-shell SiC-SiO2 nanowires and field emission characteristics [J].

Ryu, Y ;

Tak, Y ;

Yong, K .

NANOTECHNOLOGY, 2005, 16 (07) :S370-S374

[43] NANOPARTICLES AND FILLED NANOCAPSULES [J].

SAITO, Y .

CARBON, 1995, 33 (07) :979-988

[44] Optical and electrical transport properties in silicon carbide nanowires [J].

Seong, HK ;

Choi, HJ ;

Lee, SK ;

Lee, JI ;

Choi, DJ .

APPLIED PHYSICS LETTERS, 2004, 85 (07) :1256-1258

[45] Synthesis, characterization and field-emission properties of bamboo-like β-SiC nanowires [J].

Shen, Guozhen ;

Bando, Yoshio ;

Ye, Changhui ;

Liu, Boadan ;

Golberg, Dmitri .

NANOTECHNOLOGY, 2006, 17 (14) :3468-3472

[46] Three-stage transition during silicon carbide nanowire growth [J].

Shim, Hyun Woo ;

Huang, Hanchen .

APPLIED PHYSICS LETTERS, 2007, 90 (08)

[47] Synthesis of SiC nanorods from bleached wood pulp [J].

Shin, Yongsoon ;

Wang, Chongmin ;

Samuels, William D. ;

Exarhos, Greg J. .

MATERIALS LETTERS, 2007, 61 (13) :2814-2817

[48]

TANDON RK, 1985, APPL SURF SCI, V20, P527

[49] Large-scale synthesis of P-SiC/SiOx coaxial nanocables by chemical vapor reaction approach [J].

Wang, C. S. ;

Zhang, J. L. ;

Meng, A. L. ;

Zhang, M. ;

Li, Z. J. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 39 (01) :128-132

[50] Inorganic polymer-derived tubular SiC arrays from sacrificial alumina templates [J].

Wang, H ;

Li, XD ;

Kim, TS ;

Kim, DP .

APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3

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