Sensor based on a Pt/LaF3/SiO2/SiC structure for the detection of chlorofluorocarbons

被引：1

作者：

Filippov, VI ^{[1
]}

Vasil'ev, AA

Terent'ev, AA

Moritz, W

Roth, U

机构：

[1] IV Kurchatov Atom Energy Inst, Russian Sci Ctr, Moscow 123182, Russia

[2] Humboldt Univ, D-10117 Berlin, Germany

来源：

TECHNICAL PHYSICS | 1999年 / 44卷 / 11期

关键词：

Silicon; Carbide; Activation Energy; Concentration Level; Silicon Carbide;

D O I：

10.1134/1.1259519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metal-insulator-semiconductor structure based on silicon carbide with a subgate layer of LaF3 solid electrolyte is discussed as a gas sensor. The kinetics of the variation of the flat-band potential of a Pt/LaF3/SiO2/SiC structure in interaction with chlorofluorocarbons (Freons) is investigated in the temperature range from 300 to 530 degrees C. The activation energies of the gas sensitivity are estimated from the temperature dependences of the response rate of the sensor to various Freons. The possibility of detecting all the investigated chlorofluorocarbons at a concentration level of 10 ppm in air is demonstrated. (C) 1999 American Institute of Physics. [S1063-7842(99)01411-7].

引用

页码：1334 / 1339

页数：6

共 7 条

[1] GAS SENSORS FOR HIGH-TEMPERATURE OPERATION BASED ON METAL-OXIDE-SILICON CARBIDE (MOSIC) DEVICES [J].

ARBAB, A ;

SPETZ, A ;

LUNDSTROM, I .

SENSORS AND ACTUATORS B-CHEMICAL, 1993, 15 (1-3) :19-23

[2] MONITORING OF HF AND F2 USING A FIELD-EFFECT SENSOR [J].

MORITZ, W ;

KRAUSE, S ;

VASILIEV, AA ;

GODOVSKI, DY ;

MALYSHEV, VV .

SENSORS AND ACTUATORS B-CHEMICAL, 1995, 24 (1-3) :194-196

[3]

MORITZ W, 1997, P 9 INT C SOL STAT S, P1073

[4] DEVELOPMENT OF SEMICONDUCTOR FLUOROCARBON GAS SENSOR [J].

NOMURA, T ;

AMAMOTO, T ;

MATSUURA, Y ;

KAJIYAMA, Y .

SENSORS AND ACTUATORS B-CHEMICAL, 1993, 13 (1-3) :486-488

[5]

SHIRATORI M, 1983, P INT M CHEM SENS FU, P119

[6]

TERENTEV AA, 1994, POVERKHNOST, P72

[7]

TERENTEV AA, 1997, ZH ANAL KHIM, V52, P635

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