Excitons and exciton-phonon coupling in the optical response of GaN

被引：6

作者：

Shokhovets, S. ^{[1
]}

Baerwolf, F. ^{[1
]}

Gobsch, G. ^{[1
]}

Runge, E. ^{[1
]}

Koehler, K. ^{[2
]}

Ambacher, O. ^{[2
]}

机构：

[1] Ilmenau Univ Technol, Inst Phys, PF 100565, D-98684 Ilmenau, Germany

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2 | 2014年 / 11卷 / 02期

关键词：

GaN; optical response; excitons; exciton-phonon coupling; ABSORPTION; SEMICONDUCTORS; TEMPERATURE; PARAMETERS;

D O I：

10.1002/pssc.201300311

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We carried out reflectance and spectroscopic ellipsometry measurements of high-purity c-plane epitaxial films of wurtzite GaN in a temperature range 5-840 K. Analysis of the data reveals three main contributions to the dielectric function related to optical transitions involving discrete exciton states, excitonic continuum and excitonphonon complexes, respectively. The observed contributing mechanisms show different temperature dependence. This behavior is related to specific interactions between optical excitations and thermal LO phonons. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：297 / 301

页数：5

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