A CMOS Multi-Phase Injection-Locked Frequency Divider for V-Band Operation

被引：9

作者：

Farazian, Mohammad ^{[1
]}

Gudem, Prasad S. ^{[2
]}

Larson, Lawrence E. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Qualcomm Inc, San Diego, CA 92121 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2009年 / 19卷 / 04期

关键词：

Frequency divider (FD); inductor-less design methodology; injection-locking; locking range; ring-oscillator; self-resonance frequency (SRF);

D O I：

10.1109/LMWC.2009.2015509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An inductor-less injection-locked frequency divider for high-speed frequency synthesis at V-band is presented. it achieves division by six and operates up to 65 GHz. In addition, it can achieve division ratios of four and two when 44 GHz or 22 GHz input signals are applied, respectively. Implemented in a 0.13 mu m digital CMOS technology, the divider draws an average current of 18 mA, and the core area is 0.026 mm(2).

引用

页码：239 / 241

页数：3

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