Artificial retina using thin-film photodiodes and thin-film transistors

被引：26
|
作者：
Kimura, Mutsumi [1 ]
Shima, Takehiro
Okuyama, Tomoyuki
Utsunomiya, Sumio
Miyazawa, Wakao
Inoue, Satoshi
Shimoda, Tatsuya
机构：
[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
[2] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 5B期
关键词：
artificial retina; thin-film photodiode; thin-film transistor; in-pixel operation; pixel-to-pixel operation; circuit simulation; edge enhancement;
D O I：
10.1143/JJAP.45.4419
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An artificial retina using thin-film photodiodes (TFPDs) and thin-film transistors (TFTs) is proposed, which is expected to be suitable for living bodies, low-emitting and cost-effective, and which is an improvement of the system-on-panel devices in which the in-pixel and pixel-to-pixel operations are executed using TFTs. The characteristics of a TFPD and TFTs are measured, and their models are made for a circuit simulator. Circuits of the retina pixel and retina array with some improvements are invented, and it is confirmed using a circuit simulator that the artificial retina using TFPDs and TFTs can operate. Edge enhancement is also confirmed, and its dependence on the characteristic deviations of TFTs is analyzed.
引用
收藏
页码：4419 / 4422
页数：4
相关论文
共 50 条
  • [31] Modeling and simulation of hydrogenated amorphous silicon thin-film transistors
    Hafdi, Z
    Aida, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (03): : 1192 - 1198
  • [32] Amorphous silicon buried-channel thin-film transistors
    Weber, C
    Abelson, JR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 447 - 452
  • [33] Investigation on the Doping Dependence of Solution-Processed Zinc Tin Oxide Thin Film and Thin-Film Transistors
    Jung, C. H.
    Lee, J. Y.
    Pu, L. S.
    Yoon, D. H.
    SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY, 2011, 41 (09) : 1153 - 1157
  • [34] Extraction of trap densities at front and back interfaces in thin-film transistors
    Kimura, M
    Tam, SWB
    Inoue, S
    Shimoda, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 71 - 76
  • [35] Amorphous silicon thin-film transistors on compliant polyimide foil substrates
    Gleskova, H
    Wagner, S
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (09) : 473 - 475
  • [36] Comparative study on extraction methods of threshold voltage for thin-film transistors
    Bai, Ziheng
    Shi, Xuewen
    Wang, Jiawei
    Lu, Nianduan
    Duan, Xinlv
    Yang, Guanhua
    Dong, Chaofang
    Xiao, Kui
    Li, Ling
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2019, 27 (12) : 816 - 821
  • [37] Effectiveness of Electrical and Optical Detection at Pixel Circuit on Thin-Film Transistors
    Tzu, Fu-Ming
    MICROMACHINES, 2021, 12 (02) : 1 - 12
  • [38] Gate bias instability of hydrogenated amorphous SiGe thin-film transistors
    Ho Sik Jeon
    Yang Wook Heo
    Byung Seong Bae
    Sang Youn Han
    Junho Song
    Journal of the Korean Physical Society, 2013, 62 : 1183 - 1187
  • [39] Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors
    Wang, Chong
    Guo, Liang
    Lei, Mingzhou
    Wang, Chao
    Chu, Xuefeng
    Yang, Fan
    Gao, Xiaohong
    Wamg, Huan
    Chi, Yaodan
    Yang, Xiaotian
    NANOMATERIALS, 2022, 12 (14)
  • [40] Built-in current sensor with reduced voltage drop using Thin-Film Transistors
    Hatzopoulos, AA
    Siskos, S
    Dimitriadis, CA
    Papadopoulos, N
    2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, : 2196 - 2199
12345