Formation and photoluminescence spectrum of w-GaN powder

被引：23

作者：

Li, HD ^{[1
]}

Yang, HB ^{[1
]}

Zou, GT ^{[1
]}

Yu, S ^{[1
]}

Lu, JS ^{[1
]}

Qu, SC ^{[1
]}

Wu, Y ^{[1
]}

机构：

[1] JILIN UNIV,KEY LAB MOL SPECTRUM & STRUCT,CHANGCHUN 130023,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 171卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(96)00400-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultrafine gallium nitride (GaN) powder has been synthesized using the direct current (DC) are plasma method. Structural and morphological changes with different reaction gases (N-2, NH3 and N-2-NH3, respectively) were studied by X-ray diffractometry and transmission electron microscopy. GaN powder has a wurtzite structure. Measurement of the band-edge photoluminescence spectrum of w-GaN powder indicated that at room temperature the emission peak was situated at 367 nm.

引用

页码：307 / 310

页数：4

共 12 条

[1] ANDRIEVSKI RA, 1994, J MATER SCI, V29, P616
[2] CRYSTAL-GROWTH OF GAN BY THE REACTION BETWEEN GALLIUM AND AMMONIA
ELWELL, D
FEIGELSON, RS
SIMKINS, MM
TILLER, WA
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 45 - 54
[3] FAJIEDA S, 1991, JPN J APPL PHYS, V30, pL1665
[4] Guinier A, 1963, X-ray Diffraction
[5] MOLECULAR-BEAM-EPITAXY GROWTH OF GAN ON GAAS(100) BY USING REACTIVE NITROGEN-SOURCE
HE, ZQ
DING, XM
HOU, XY
WANG, X
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (03) : 315 - 317
[6] AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES
JENKINS, LC
CHENG, TS
FOXON, CT
HOOPER, SE
ORTON, JW
NOVIKOV, SV
TRETYAKOV, VV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1585 - 1590
[7] EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN
KARPINSKI, J
JUN, J
POROWSKI, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 1 - 10
[8] KHAN MA, 1991, APPL PHYS LETT, V58, P526, DOI 10.1063/1.104575
[9] EPITAXIAL-GROWTH OF ZINC BLENDE AND WURTZITIC GALLIUM NITRIDE THIN-FILMS ON (001) SILICON
LEI, T
FANCIULLI, M
MOLNAR, RJ
MOUSTAKAS, TD
GRAHAM, RJ
SCANLON, J
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (08) : 944 - 946
[10] MATERIALS SYNTHESIS ON THE BASIS OF ULTRAFINE REFRACTORY COMPOUND POWDERS
MILLERS, T
[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1993, 168 (02): : 171 - 176

← 1 2 →