Silicon carbide on insulator formation by the Smart-Cut(R) process

被引：80

作者：

DiCioccio, L

Letertre, F

LeTiec, Y

Papon, AM

Jaussaud, C

Bruel, M

机构：

[1] LETI-CEA Grenoble, Dept. de Microtechnologies SIA/ES, 38054 Grenoble Cedex

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

silicon carbide; insulator structures; wafer bonding; direct bonding;

D O I：

10.1016/S0921-5107(96)02004-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For the first time silicon carbide on insulator structures (SiCOI) were achieved by the Smart-Cut (R) process. These structures were formed on polycrystalline SiC and on silicon substrates. The technological solutions used and the structures obtained are presented in this paper. (C) 1997 Published by Elsevier Science S.A.

引用

页码：349 / 356

页数：8

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