Optimized growth conditions for the epitaxial nucleation of beta-GaN on GaAs(001) by molecular beam epitaxy

被引：39
作者：
Brandt, O
Yang, H
Trampert, A
Wassermeier, M
Ploog, KH
机构：
[1] Paul-Drude-Inst. F. F., D-10117 Berlin
[2] Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Chinese Academy of Science, Beijing 100083
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期
关键词：
D O I：
10.1063/1.119583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrathin (5-7 monolayers) nucleation layers of GaN are deposited on (2x4)-GaAs(001) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction applied in situ reveals these layers to be epitaxial beta-GaN. Transmission electron microscopy confirms this result and reveals in addition that the layers are highly connected and have an atomically abrupt interface to the GaAs substrate. The rms roughness of these layers, as measured by atomic force microscopy, is as low as 1.4 Angstrom. (C) 1997 American Institute of Physics.
引用
收藏
页码：473 / 475
页数：3
相关论文
共 8 条
  • [1] Surface kinetics of zinc-blende (001)GaN
    Brandt, O
    Yang, H
    Ploog, KH
    [J]. PHYSICAL REVIEW B, 1996, 54 (07): : 4432 - 4435
  • [2] SURFACE RECONSTRUCTIONS OF ZINCBLENDE GAN/GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
    BRANDT, O
    YANG, H
    JENICHEN, B
    SUZUKI, Y
    DAWERITZ, L
    PLOOG, KH
    [J]. PHYSICAL REVIEW B, 1995, 52 (04) : R2253 - R2256
  • [3] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS
    KUWANO, N
    NAGATOMO, Y
    KOBAYASHI, K
    OKI, K
    MIYOSHI, S
    YAGUCHI, H
    ONABE, K
    SHIRAKI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 18 - 22
  • [4] Observation of MBE-grown cubic-GaN/GaAs and cubic-GaN/3C-SiC interfaces by high resolution transmission electron microscope
    Okumura, H
    Ohta, K
    Nagatomo, T
    Yoshida, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 149 - 153
  • [5] Direct observation of the initial nucleation and epitaxial growth of metastable cubic GaN on (001)GaAs
    Trampert, A
    Brandt, O
    Yang, H
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (05) : 583 - 585
  • [6] Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy
    Yang, H
    Brandt, O
    Trampert, A
    Ploog, KH
    [J]. APPLIED SURFACE SCIENCE, 1996, 104 : 461 - 467
  • [7] Yang H, 1996, APPL PHYS LETT, V68, P244, DOI 10.1063/1.116474
  • [8] Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED
    Yang, H
    Brandt, O
    Ploog, K
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 787 - 791
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