SnO2;
Co doping;
Optical properties;
Reflectance spectrum;
Si substrate;
COMPLEX REFRACTIVE-INDEX;
CONSTANTS;
THICKNESS;
FERROMAGNETISM;
NANOPARTICLES;
ANTIMONY;
RAMAN;
D O I:
10.1016/j.optmat.2020.110579
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
SnO2 thin films are deposited using spray pyrolysis technique on p-type silicon (Si) substrate by varying the Cobalt (Co) doping ratio from 3 to 5 at % in order to investigate the effect of the doping on the optical parameters of these films. Optical reflectance measurements are performed both for films and substrate. A simple analysis which is created as a combination of three different methods proposed earlier including the effect of the substrate is applied for the optical characterization of Co-doped SnO2 thin films. In addition to thickness, optical parameters such as refraction index and extinction coefficients are also obtained accurately, by applying this created procedure. The optical band gap and Urbach energy of the films are determined from the spectral dependence of the absorption coefficient. The refraction index and band gap energy of SnO2 films are found to be decreasing whereas Urbach energy is found to be increasing with increasing Co doping ratio. The roughness value of Co-doped SnO2 thin films on p-type Si is obtained with such a high precise only from reflectance spectrum.
机构:
Indira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, India
Das, Soumen
Jayaraman, V.
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机构:
Indira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, India
机构:
E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R ChinaE China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Deng, Hongmei
Kong, Jing
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机构:
E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R ChinaE China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Kong, Jing
Yang, Pingxiong
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R ChinaE China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
机构:
Indira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, India
Das, Soumen
Jayaraman, V.
论文数: 0引用数: 0
h-index: 0
机构:
Indira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Mat Chem Div, Kalpakkam 603102, Tamil Nadu, India
机构:
E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R ChinaE China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Deng, Hongmei
Kong, Jing
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R ChinaE China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Kong, Jing
Yang, Pingxiong
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R ChinaE China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China