Screening phenomena in Si/Si1-xGex quantum wells

被引：6
|
作者：
Plews, AD [1 ]
Mattey, NL [1 ]
Phillips, PJ [1 ]
Parker, EHC [1 ]
Whall, TE [1 ]
机构：
[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 10期
关键词：
D O I：
10.1088/0268-1242/12/10/009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical conductivity of the 2DHG formed at the Si/Si1-xGex interface has been measured on samples with composition 0.05 < x < 0.29 and carrier sheet densities between 1 x 10(11) cm(-2) and 1.1 x 10(12) cm(-2) in the temperature range 0.3 K to 1.6 K. It is found that the temperature (T) dependence is described by the superposition of a screening term linear in T and a logarithmic term associated with weak localization and carrier-carrier interactions. We find no evidence for a screening term with a T-2 dependence as has been predicted as a consequence of lifetime broadening. The results are in satisfactory quantitative agreement with Gold and Dolgopolov's theory of screening of short-range scattering centres.
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收藏
页码：1231 / 1234
页数：4
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