A 4.6-ppm/°C High-Order Curvature Compensated Bandgap Reference for BMIC

被引：60
|
作者：
Zhu, Guangqian [1 ]
Yang, Yintang [1 ]
Zhang, Qidong [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2019年 / 66卷 / 09期
关键词：
Low-temperature coefficient; voltage reference; high-order curvature compensation; CMOS VOLTAGE REFERENCE;
D O I：
10.1109/TCSII.2018.2889808
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This brief presents a high precision high-order curvature-compensated bandgap voltage reference (BGR) with a 3.11-V output voltage for battery-management integrated circuits. The proposed circuit utilizes the exponential characteristics of the base current and the resistance between bases of bipolar transistors to perform corrections. The curvature of subthreshold-operating MOSFETs is considered to further compensate for high-order temperature effects over a wide temperature range of 170 degrees C. Test results for the proposed BGR fabricated utilizing a standard 0.18-mu m BiCMOS process demonstrate that its line regulation is approximately 0.31 mV/V in a supply voltage range of 4.2-6.0 V. with 4-bit trimming, a temperature coefficient of 4.6 ppm/degrees C is obtained in the range of -40 degrees C to 130 degrees C. The active area of the proposed BGR is 634 x 351 mu m.
引用
收藏
页码：1492 / 1496
页数：5
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