Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)

被引：28
作者：
Pustelny, B. [1 ]
Pustelny, T. [2 ]
机构：
[1] Silesian Tech Univ, Inst Phys, PL-44100 Gliwice, Poland
[2] Silesian Tech Univ, Dept Optoelect, PL-44100 Gliwice, Poland
来源：
ACTA PHYSICA POLONICA A | 2009年 / 116卷 / 03期
关键词：
GAP;
D O I：
10.12693/APhysPolA.116.383
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime tau of minority carrier in the near-surface region and the surface potential V. in GaP:Te(111) surfaces after their different technological treatments were determined.
引用
收藏
页码：383 / 384
页数：2
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