4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

被引：0

作者：

Nakayama, K ^{[1
]}

Sugawara, Y ^{[1
]}

Tsuchida, H ^{[1
]}

Miyanagi, T ^{[1
]}

Kamata, I ^{[1
]}

Nakamura, T ^{[1
]}

Asano, K ^{[1
]}

Takayama, D ^{[1
]}

机构：

[1] Kansai Elect Power Co Inc, Amagasaki, Hyogo 6610974, Japan

来源：

ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of a pin diode's forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode's highest breakdown voltage of 4.6 kV is achieved, and DeltaV(f) reduces to 0.04 V.

引用

页码：357 / 360

页数：4

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