Bias voltage-dependent photoluminescence near Fermi level in n-type modulation-doped quantum dot arrays

被引：2
作者：
Nomura, S
Sugano, T
Aoyagi, Y
机构：
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 35101, Japan
来源：
PHYSICA E | 2000年 / 6卷 / 1-4期
关键词：
quantum dot array; electron gas; photoluminescence;
D O I：
10.1016/S1386-9477(99)00214-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on a bias voltage-dependent photoluminescence (PL) peak near the Fermi level in n-type modulation-doped quantum dot arrays. A remarkably sharp peak with a spectral width of less than 0.1 meV is ob:observed near the Fermi level in PL at 0.4 K, which shows strong temperature dependence. This peak is considered to be due to the Coulomb interaction between the electron gas and a photo-generated hole. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：432 / 435
页数：4
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