Determination of junction temperature in AlGaInP/GaAs light emitting diodes by self-excited photoluminescence signal

被引：33
作者：
Chen, N. C. [1 ]
Wang, Y. N.
Tseng, C. Y.
Yang, Y. K.
机构：
[1] Chang Gung Univ, Inst Electroopt Engn, Tao Yuan 333, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期
关键词：
D O I：
10.1063/1.2345587
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device. (c) 2006 American Institute of Physics.
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