Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 °C by Ohmic contact recess etching

被引：25
|
作者：
Lau, W. S. [1 ]
Tan, J. B. H. [1 ]
Singh, B. P. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Microelect, Singapore 639798, Singapore
来源：
MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 05期
关键词：
ELECTRON-MOBILITY TRANSISTORS; N-TYPE GAN; ALXGA1-XN/GAN; MECHANISM; CAP;
D O I：
10.1016/j.microrel.2009.02.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Good Ti/Al/Ti/Au Ohmic contacts were achieved in undoped-AlGaN/GaN HEMT structures at 500 degrees C (measured by a thermocouple) by using an Ohmic contact recess etch. The Ohmic recess etch is deeper than the undoped AlGaN layer and hence reaches the two-dimensional electron gas. Good morphology and well-defined edge profile are also achieved. Because of the low temperature, this process can tolerate quite some water vapor related issue during Ohmic contact anneal. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：558 / 561
页数：4
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