Multireference configuration interaction study of the low-lying electronic states of SiS+

被引:7
|
作者
Chattopadhyaya, S [1 ]
Das, KK [1 ]
机构
[1] Jadavpur Univ, Dept Chem, Chem Phys Sect, Kolkata 700032, W Bengal, India
关键词
D O I
10.1088/0953-4075/37/16/011
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The electronic spectrum of (SiS+)-Si-28-S-32 has been studied by using relativistic configuration interaction calculations which include effective core potentials. Spectroscopic constants and potential energy curves of low-lying states within 5 eV have been computed. The spin-orbit coupling has also been included in the calculations. The vertical ionization potentials of the ground-state SiS to the ground and a few excited states of SiS+ have been calculated and compared with the experimentally derived values. The transition moment functions of some dipole allowed transitions such as B(2)Sigma(+)-X(2)Pi, B(2)Sigma(+)-A(2)Sigma(+) etc have been constructed. The dipole moments of three doublets such as X(2)Pi, A(2)Sigma(+) and B(2)Sigma(+) and three quartets such as (4)Pi, 4Sigma(+) and (4)Delta of SiS+ are reported. The radiative lifetimes of a couple of excited (2)Sigma(+) states are estimated.
引用
收藏
页码:3355 / 3367
页数:13
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