Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors

被引:23
作者
Basu, Aniruddha [1 ]
Niazi, Muhammad Rizwan [1 ]
Scaccabarozzi, Alberto D. [1 ]
Faber, Hendrik [1 ]
Fei, Zuping [2 ]
Anjum, Dalaver H. [3 ]
Paterson, Alexandra F. [1 ]
Boltalina, Olga [4 ]
Heeney, Martin [5 ,6 ]
Anthopoulos, Thomas D. [1 ]
机构
[1] King Abdullah Univ Sci & Technol KAUST, KAUST Solar Ctr KSC, Thuwal 239556900, Saudi Arabia
[2] Tianjin Univ, Inst Mol Plus, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
[3] King Abdullah Univ Sci & Technol, KAUST CoreLabs, Thuwal 239556900, Saudi Arabia
[4] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA
[5] Imperial Coll London, Dept Chem, London SW7 2AZ, England
[6] Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; LARGE-AREA; ORGANIC TRANSISTORS; POLYMER BLENDS; MOBILITY; FABRICATION; DEPOSITION; PENTACENE;
D O I
10.1039/d0tc03094e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Blade-coating is a roll-to-roll (R2R) compatible processing technique and has the potential to address the industry's needs for scalable manufacturing of future organic electronics. Here we investigate the applicability of blade-coating for the fabrication of organic thin-film transistors (OTFTs) based on best-in-class organic semiconducting blends comprised of the conjugated small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C-8-BTBT), and the conjugated polymer poly(indacenodithiophene-co-benzothiadiazole) (C16IDT-BT). We show that the operating characteristics of blade-coated transistors consistently outperform devices prepared via spin-coating, showcasing the compatibility of the technique. Introducing the molecular p-dopant C60F48 into the binary C-8-BTBT:C16IDT-BT blend formulation, in combination with carefully optimized blade-coating conditions, helps to enhance the performance of the ensuing transistors further resulting in a maximum hole mobility of approximate to 14 cm(2) V-1 s(-1), and an all-around improvement of the device operating characteristics. Our results show that p-doped blend OTFTs can be manufactured using industry relevant processing techniques without sacrificing their state-of-the-art performance.
引用
收藏
页码:15368 / 15376
页数:9
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