Reflective semiconductor optical amplifiers-based all-optical NOR and XNOR logic gates at 120 Gb/s

被引:13
作者
Kotb, Amer [1 ,2 ]
Guo, Chunlei [3 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, GPL Photon Lab, Changchun 130033, Peoples R China
[2] Univ Fayoum, Fac Sci, Dept Phys, Al Fayyum 63514, Egypt
[3] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
关键词
All-optical NOR logic gate; all-optical XNOR logic gate; reflective semiconductor optical amplifier; quality factor;
D O I
10.1080/09500340.2020.1862333
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we reported a reflective semiconductor optical amplifier (RSOA), in which the input light propagates and reflects back to the input port after amplifying twice through its active region. The RSOA produces higher gain and lower noise figure at low drive currents with energy-efficient than the conventional SOAs. The RSOA's features are employed herein to numerically analyze the ultrafast performance of the all-optical NOT-OR (NOR) and Exclusive-NOR (XNOR) logic gates using a dual-RSOAs-based scheme at 120 Gb/s. A comparison between RSOAs- and conventional SOAs-based AO NOR and XNOR gates is made by studying the quality factor (QF) against the critical operational parameters when the effects of the amplified spontaneous emission and the operating temperature are included to obtain more realistic results. Compared to conventional SOAs, the RSOAs allow to achieve more acceptable performance at 120 Gb/s and to render the implementation of the NOR and XNOR gates more feasible.
引用
收藏
页码:1424 / 1435
页数:12
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