Dielectric properties of BaTiO3/SrTiO3 oxide superlattice

被引:0
作者
Lee, J [1 ]
Kim, L [1 ]
Kim, J [1 ]
Kim, Y [1 ]
Jung, D [1 ]
机构
[1] Sung Kyun Kwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源
FUNDAMENTAL PHYSICS OF FERROELECTRICS 2002 | 2002年 / 626卷
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
BaTiO3 (BTO)/SrTiO3 (STO) artificial superlattices have been fabricated by pulsed laser deposition (PLD) on MgO (100). The stacking periodicity of the BTO/STO each layers in the superlattice was varied from one unit cell to 125 unit cell thickness. The dielectric constant and voltage tunability of the BTO/STO superlattice increased with decreasing the stacking periodicity of the BTO/STO within the critical thickness (similar to 20 nm). Dielectric constant and voltage tunability reached a maximum similar to 1600 and 94 % at the stacking periodicity of BTO2 (unit cell) /STO2 (unit cell). The size effect of the dielectric constant was significantly diminished by artificial oxide superlattice approach. Those dielectric properties were attributed to the lattice distortion of the superlattice.
引用
收藏
页码:178 / 187
页数:10
相关论文
共 22 条
[1]   FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES [J].
AHN, CH ;
TRISCONE, JM ;
ARCHIBALD, N ;
DECROUX, M ;
HAMMOND, RH ;
GEBALLE, TH ;
FISCHER, O ;
BEASLEY, MR .
SCIENCE, 1995, 269 (5222) :373-376
[2]   The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition [J].
Basceri, C ;
Streiffer, SK ;
Kingon, AI ;
Waser, R .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2497-2504
[3]   The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films [J].
Chang, WT ;
Horwitz, JS ;
Carter, AC ;
Pond, JM ;
Kirchoefer, SW ;
Gilmore, CM ;
Chrisey, DB .
APPLIED PHYSICS LETTERS, 1999, 74 (07) :1033-1035
[4]   Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal-ferroelectric-insulator-semiconductor structure [J].
Choi, T ;
Kim, YS ;
Yang, CW ;
Lee, J .
APPLIED PHYSICS LETTERS, 2001, 79 (10) :1516-1518
[5]   Microstructure and dielectric properties of Ba1-xSrxTiO3 films grown on LaAlO3 substrates [J].
Gim, Y ;
Hudson, T ;
Fan, Y ;
Kwon, C ;
Findikoglu, AT ;
Gibbons, BJ ;
Park, BH ;
Jia, QX .
APPLIED PHYSICS LETTERS, 2000, 77 (08) :1200-1202
[6]  
HELLWEGE KH, 1981, LANDOLTBORNSTEIN, V16, P64
[7]  
JUN S, 2000, APPL PHYS LETT, V78, P2532
[8]   Ferroelectric field effect in (La,Sr)CoO3/Pb(Zr,Ti)O-3/(La,Sr)CoO3 heterostructures [J].
Kim, SW ;
Lee, JC .
INTEGRATED FERROELECTRICS, 1997, 18 (1-4) :405-414
[9]   The effect of annealing on the structure and dielectric properties of BaxSr1-xTiO3 ferroelectric thin films [J].
Knauss, LA ;
Pond, JM ;
Horwitz, JS ;
Chrisey, DB ;
Mueller, CH ;
Treece, R .
APPLIED PHYSICS LETTERS, 1996, 69 (01) :25-27
[10]   A review of high dielectric materials for DRAM capacitors [J].
Kotecki, DE .
INTEGRATED FERROELECTRICS, 1997, 16 (1-4) :1-19