Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

被引：26
作者：
Fukuoka, O.
Matsunami, N. [1 ]
Tazawa, M.
Shimura, T.
Sataka, M.
Sugai, H.
Okayasu, S.
机构：
[1] Nagoya Univ, Div Energy Sci, EcoTopia Sci Inst, Nagoya, Aichi 4648603, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan
[3] Nagoya Univ, Nano Mat Sci Div, EcoTopia Sci INst, Nagoya, Aichi 4648603, Japan
[4] Japan Atom Energy Res Inst, Dept Mat Sci, Tokai, Ibaraki 3191195, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 250卷
关键词：
Al-doped ZnO; ion irradiation; optical property; conductivity;
D O I：
10.1016/j.nimb.2006.04.146
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 degrees C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：295 / 299
页数：5
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