Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

被引：10

作者：

Basco, R ^{[1
]}

Prabhu, A ^{[1
]}

Yngvesson, KS ^{[1
]}

Lau, KM ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA 01003

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 01期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.554785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the integration of an AlGaAs/GaAs two-dimensional electron gas (2-DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off (ELO) technique. The 1 mu m thick high-mobility 2-DEG device transplanted on quartz showed no sign of degradation resulting from the ELO process. The 2-DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. We obtained a minimum intrinsic conversion loss of 17 dB at 94 GHz at liquid nitrogen temperature. The measured IF bandwidth of the mixer was greater than 3 GHz.

引用

页码：11 / 16

页数：6

共 7 条

[1] ULTRAHIGH MOBILITY 2-DIMENSIONAL ELECTRON-GAS IN ALXGA1-XAS/GAAS HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

BASCO, R ;

AGAHI, F ;

KEI, ML .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1960-1962

[2]

MEHDI I, 1994, IEEE MTT-S, P779, DOI 10.1109/MWSYM.1994.335240

[3] AN IMPROVED AUGE OHMIC CONTACT TO N-GAAS [J].

NATHAN, MI ;

HEIBLUM, M .

SOLID-STATE ELECTRONICS, 1982, 25 (10) :1063-1065

[4] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS [J].

YABLONOVITCH, E ;

GMITTER, T ;

HARBISON, JP ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2222-2224

[5] VANDERWAALS BONDING OF GAAS EPITAXIAL LIFTOFF FILMS ONTO ARBITRARY SUBSTRATES [J].

YABLONOVITCH, E ;

HWANG, DM ;

GMITTER, TJ ;

FLOREZ, LT ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2419-2421

[6] Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers [J].

YANG, JX ;

AGAHI, F ;

DAI, D ;

MUSANTE, CF ;

GRAMMER, W ;

LAU, KM ;

YNGVESSON, KS .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (04) :581-589

[7] RF PROPERTIES OF EPITAXIAL LIFT-OFF HEMT DEVICES [J].

YOUNG, PG ;

ALTEROVITZ, SA ;

MENA, RA ;

SMITH, ED .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) :1905-1909

← 1 →