Minimal phase-change marks produced in amorphous Ge2Sb2Te5 films

被引：33

作者：

Gotoh, T ^{[1
]}

Sugawara, K ^{[1
]}

Tanaka, K ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 6B期

关键词：

AFM; Joule heat; phase change; nanoscale crystallization; Ge-Sb-Te;

D O I：

10.1143/JJAP.43.L818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The smallest mark which can be produced in phase-change recordings has been explored using an atomic force microscope. Electrical pulses applied to amorphous Ge2Sb2Te5 films through conducting cantilevers can produce crystalline marks, the size decreasing with decreases in input power, pulse duration, and film thickness. The smallest mark obtained is similar to10 nm in diameter in a film with thickness of similar to1 nm. Formation mechanism of the mark is discussed.

引用

页码：L818 / L821

页数：4

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