The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance

被引：1

作者：

Catania, Federica ^{[1
]}

Oliveira, Hugo De Souza ^{[1
]}

Costa Angeli, Martina A. ^{[1
]}

Ciocca, Manuela ^{[1
]}

Pane, Salvador ^{[2
]}

Munzenrieder, Niko ^{[1
]}

Cantarella, Giuseppe ^{[1
]}

机构：

[1] Free Univ Bolzano Bozen, Fac Sci & Technol, Bolzano, Italy

[2] Inst Robot & Intelligent Syst, ETH Zurich, Zurich, Switzerland

来源：

FRONTIERS IN ELECTRONICS | 2022年 / 2卷

关键词：

thin-film transistors (TFTs); flexible electronics; oxide semiconductors; indium-gallium-zinc-oxide (IGZO); wearable electronics; humidity sensor; temperature sensor; IGZO TFTS; ILLUMINATION; STABILITY;

D O I：

10.3389/felec.2021.786601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from -30.0 degrees C to 50.0 degrees C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0 degrees C, 22%) to Antarctic (-30.0 degrees C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin.

引用

页数：6

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