Interfacial growth at the HfO2/Si interface during annealing in oxygen ambient

被引：9
作者：
Jiang, Ran [1 ]
Li, Zifeng [1 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 06期
基金：
国家教育部博士点专项基金资助; 中国博士后科学基金;
关键词：
THERMAL-STABILITY; SI OXIDATION; LAYER; TEMPERATURE; FILMS; ZRO2;
D O I：
10.1088/0268-1242/24/6/065006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growth of an interfacial layer (IL) at the HfO2/Si interface during annealing in oxygen ambient was investigated using x-ray photoelectron spectroscopy. It is found that the IL grows linearly at low annealing temperatures (< 600 degrees C) but nonlinearly at high ones (>= 600 degrees C). This is caused by the crystallization of the HfO2 layer and the Si emission from substrates. The influences of the HfO2 thickness and the oxygen pressure on the interfacial growth were also evaluated.
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页数：4
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