Two-dimensional transition metal dichalcogenides: interface and defect engineering

被引:691
作者
Hu, Zehua [1 ,2 ,3 ,4 ]
Wu, Zhangting [5 ]
Han, Cheng [1 ,2 ,3 ,6 ]
He, Jun [7 ]
Ni, Zhenhua [5 ]
Chen, Wei [1 ,2 ,3 ,4 ,8 ]
机构
[1] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore
[2] Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore
[4] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore
[5] Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China
[6] Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China
[7] Cent S Univ, Sch Phys & Elect, 932 South Lushan Rd, Changsha 410083, Hunan, Peoples R China
[8] Natl Univ Singapore, Suzhou Res Inst, 377 Lin Quan St,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China
关键词
FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER MOS2; HIGH-PERFORMANCE WSE2; P-N-JUNCTION; ELECTRONIC TRANSPORT-PROPERTIES; SCHOTTKY-BARRIER HEIGHTS; TUNABLE BAND-GAP; MULTILAYER MOS2; MONOLAYER MOS2;
D O I
10.1039/c8cs00024g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics. Because of their atomically-thin structure and high surface to volume ratio, the interfaces involved in TMDC-based devices play a predominant role in determining the device performance, such as charge injection/collection at the metal/TMDC interface, and charge carrier trapping at the dielectric/TMDC interface. On the other hand, the crystalline structures of TMDCs are enriched by a variety of intrinsic defects, including vacancies, adatoms, grain boundaries, and substitutional impurities. Customized design and engineering of the interfaces and defects provides an effective way to modulate the properties of TMDCs and finally enhance the device performance. Herein, we summarize and highlight recent advances and state-of-the-art investigations on the interface and defect engineering of TMDCs and their corresponding applications in electronic and optoelectronic devices. Various interface engineering approaches for TMDCs are overviewed, including surface charge transfer doping, TMDC/metal contact engineering, and TMDC/dielectric interface engineering. Subsequently, different types of structural defects in TMDCs are introduced. Defect engineering strategies utilized to modulate the optical and electronic properties of TMDCs, as well as the developed high-performance and functional devices are summarized. Finally, we highlight the challenges and opportunities for interface and defect engineering in TMDC materials for electronics and optoelectronics.
引用
收藏
页码:3100 / 3128
页数:29
相关论文
共 261 条
[1]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[2]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[3]   Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure [J].
Azcatl, Angelica ;
Qin, Xiaoye ;
Prakash, Abhijith ;
Zhang, Chenxi ;
Cheng, Lanxia ;
Wang, Qingxiao ;
Lu, Ning ;
Kim, Moon J. ;
Kim, Jiyoung ;
Cho, Kyeongjae ;
Addou, Rafik ;
Hinkle, Christopher L. ;
Appenzeller, Joerg ;
Wallace, Robert M. .
NANO LETTERS, 2016, 16 (09) :5437-5443
[4]   MoS2 functionalization for ultra-thin atomic layer deposited dielectrics [J].
Azcatl, Angelica ;
McDonnell, Stephen ;
Santosh, K. C. ;
Peng, Xin ;
Dong, Hong ;
Qin, Xiaoye ;
Addou, Rafik ;
Mordi, Greg I. ;
Lu, Ning ;
Kim, Jiyoung ;
Kim, Moon J. ;
Cho, Kyeongjae ;
Wallace, Robert M. .
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[5]   High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects [J].
Bao, Wenzhong ;
Cai, Xinghan ;
Kim, Dohun ;
Sridhara, Karthik ;
Fuhrer, Michael S. .
APPLIED PHYSICS LETTERS, 2013, 102 (04)
[6]   Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2 [J].
Baugher, Britton W. H. ;
Churchill, Hugh O. H. ;
Yang, Yafang ;
Jarillo-Herrero, Pablo .
NANO LETTERS, 2013, 13 (09) :4212-4216
[7]   Recent Advances in Two-Dimensional Materials beyond Graphene [J].
Bhimanapati, Ganesh R. ;
Lin, Zhong ;
Meunier, Vincent ;
Jung, Yeonwoong ;
Cha, Judy ;
Das, Saptarshi ;
Xiao, Di ;
Son, Youngwoo ;
Strano, Michael S. ;
Cooper, Valentino R. ;
Liang, Liangbo ;
Louie, Steven G. ;
Ringe, Emilie ;
Zhou, Wu ;
Kim, Steve S. ;
Naik, Rajesh R. ;
Sumpter, Bobby G. ;
Terrones, Humberto ;
Xia, Fengnian ;
Wang, Yeliang ;
Zhu, Jun ;
Akinwande, Deji ;
Alem, Nasim ;
Schuller, Jon A. ;
Schaak, Raymond E. ;
Terrones, Mauricio ;
Robinson, Joshua A. .
ACS NANO, 2015, 9 (12) :11509-11539
[8]   Design challenges of technology scaling [J].
Borkar, S .
IEEE MICRO, 1999, 19 (04) :23-29
[9]   Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors [J].
Braga, Daniele ;
Lezama, Ignacio Gutierrez ;
Berger, Helmuth ;
Morpurgo, Alberto F. .
NANO LETTERS, 2012, 12 (10) :5218-5223
[10]   Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].
Britnell, L. ;
Ribeiro, R. M. ;
Eckmann, A. ;
Jalil, R. ;
Belle, B. D. ;
Mishchenko, A. ;
Kim, Y. -J. ;
Gorbachev, R. V. ;
Georgiou, T. ;
Morozov, S. V. ;
Grigorenko, A. N. ;
Geim, A. K. ;
Casiraghi, C. ;
Castro Neto, A. H. ;
Novoselov, K. S. .
SCIENCE, 2013, 340 (6138) :1311-1314