Interplay of plasma-induced and fast thermal nonlinearities in a GaAs-based photonic crystal nanocavity

被引：40
作者：
de Rossi, Alfredo [1 ]
Lauritano, Michele [1 ,2 ]
Combrie, Sylvain [1 ]
Tran, Quynh Vy [1 ]
Husko, Chad [1 ,3 ]
机构：
[1] Thales Res & Technol, F-91767 Palaiseau, France
[2] Univ Ferrara, Dept Engn, I-44100 Ferrara, Italy
[3] Columbia Univ, New York, NY USA
来源：
PHYSICAL REVIEW A | 2009年 / 79卷 / 04期
关键词：
gallium arsenide; III-V semiconductors; microcavities; nanophotonics; nonlinear optics; optical materials; photonic crystals; thermo-optical devices; ALL-OPTICAL SWITCH; SILICON; ALGAAS; MEMORY; CAVITY;
D O I：
10.1103/PhysRevA.79.043818
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigate the nonlinear response of GaAs-based photonic crystal cavities at time scales which are much faster than the typical thermal relaxation rate in photonic devices. We demonstrate a strong interplay between thermally and carrier-induced nonlinear effects. We have introduced a dynamical model entailing two thermal relaxation constants which is in very good agreement with experiments. These results will be very important for photonic crystal-based nonlinear devices intended to deal with practical high repetition rate optical signals.
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页数：9
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