Interplay of plasma-induced and fast thermal nonlinearities in a GaAs-based photonic crystal nanocavity

被引：40

作者：

de Rossi, Alfredo ^{[1
]}

Lauritano, Michele ^{[1
,2
]}

Combrie, Sylvain ^{[1
]}

Tran, Quynh Vy ^{[1
]}

Husko, Chad ^{[1
,3
]}

机构：

[1] Thales Res & Technol, F-91767 Palaiseau, France

[2] Univ Ferrara, Dept Engn, I-44100 Ferrara, Italy

[3] Columbia Univ, New York, NY USA

来源：

PHYSICAL REVIEW A | 2009年 / 79卷 / 04期

关键词：

gallium arsenide; III-V semiconductors; microcavities; nanophotonics; nonlinear optics; optical materials; photonic crystals; thermo-optical devices; ALL-OPTICAL SWITCH; SILICON; ALGAAS; MEMORY; CAVITY;

D O I：

10.1103/PhysRevA.79.043818

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the nonlinear response of GaAs-based photonic crystal cavities at time scales which are much faster than the typical thermal relaxation rate in photonic devices. We demonstrate a strong interplay between thermally and carrier-induced nonlinear effects. We have introduced a dynamical model entailing two thermal relaxation constants which is in very good agreement with experiments. These results will be very important for photonic crystal-based nonlinear devices intended to deal with practical high repetition rate optical signals.

引用

页数：9

共 47 条

[1] The nonlinear optical properties of AlGaAs at the half band gap [J].