Surface segregation of W doped in ZnO thin films

被引：9
作者：
Suzuki, T. T. [1 ]
Adachi, Y. [1 ]
Saito, N. [1 ]
Hashiguchi, M. [1 ]
Sakaguchi, I. [1 ]
Ohashi, N. [1 ]
Hishita, S. [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
SURFACE SCIENCE | 2014年 / 625卷
关键词：
Surface segregation; Ion scattering spectroscopy; Tungsten; Zinc oxide; PHOTOCATALYTIC DEGRADATION; COMPOSITE POWDERS; ION-SCATTERING; TUNGSTEN; SAPPHIRE; GROWTH; WO3; POLARITY; DRIVEN; DYE;
D O I：
10.1016/j.susc.2014.02.014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We observed surface segregation of W (0.05-4 mol%) doped in ZnO films by annealing above 900 K. The segregation coefficient was related to the crystal quality of the film, where slower segregation occurs in higher-quality crystalline films. Using low-energy He+ ion scattering spectroscopy for structure analysis, we found that the W-ZnO surface terminates with an O-layer, and W is located in a substitutional site of Zn at the second surface layer as a consequence of segregation. On the other hand, we observed no indication that W occupies certain sites in the ZnO lattice at the subsurface. Ultraviolet photoelectron spectroscopy (He I) on the W-segregated ZnO surface indicates that W is hexavalent at the Zn site. The segregation of the W atom is likely accompanied by two Zn vacancies. Ion beam mixing followed by annealing of the ZnO surface deposited with W provides a surface electronic structure similar to that of W-segregated ZnO. (C) 2014 Elsevier B.V. All rights reserved.
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页码：1 / 6
页数：6
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