Magnetotransport study of nanoscale Permalloy-Si tunnelling structures in lateral spin-valve geometry

被引：15

作者：

Hacia, S ^{[1
]}

Last, T ^{[1
]}

Fischer, SF ^{[1
]}

Kunze, U ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2004年 / 37卷 / 09期

关键词：

D O I：

10.1088/0022-3727/37/9/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetotransport measurements were performed on a Permalloy/Mg/SiO2/n(+)-Si (100) spin-valve tunnelling device. Magnetic force microscope imaging proves the single-domain state of the I mum elongated and 200 nm wide parallel Permalloy (Py) electrodes. Anisotropic magnetoresistance (AMR) measurements reveal precisely the magnetic field interval of antiparallel magnetization configuration essential for spin-valve operation, in between the switching fields of 15 and 40 mT. Unlike the negative AMR of the Py wires, the tunnelling device shows a small positive magnetoresistance for antiparallel magnetization configuration, as expected for the spin-blockade mechanism.

引用

页码：1310 / 1315

页数：6

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