Cost-effective single-etched TM-mode SOI grating couplers for broadband perfectly vertical coupling

被引:4
作者
Dabos, G. [1 ]
Kalavrouziotis, D. [2 ]
Bolten, J. [3 ]
Prinzen, A. [3 ]
Pleros, N. [1 ,4 ]
Tsiokos, D. [1 ,4 ]
机构
[1] Aristotle Univ Thessaloniki, Dept Informat, Thessaloniki, Greece
[2] Natl Tech Univ Athens, Sch Elect Engn & Comp Engn, Athens 15780, Greece
[3] AMO GmbH, AMICA, D-52074 Aachen, Germany
[4] Informat & Telemat Inst, Ctr Res & Technol Hellas, Thessaloniki, Greece
来源
SILICON PHOTONICS IX | 2014年 / 8990卷
关键词
TM grating coupler; silicon on insulator; photonic integrated circuit; perfectly vertical coupling; chirped grating coupler; FABRICATION;
D O I
10.1117/12.2039568
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present a uniform fully-etched TM-mode grating coupler for vertical coupling of light into SOI photonic integrated circuits and a chirped alternative to increase its bandwidth by using the same fabrication steps and maintaining its coupling efficiency. The first design refers to a uniform grating consisting of 22 periods with 670 nm period length, exhibiting 5.6 dB coupling losses at 1564 nm and a 3dB bandwidth of 32 nm. The 3dB bandwidth is extended from 32 to 76 nm by adding a chirped section at the front end of the uniform section in the second design. The ultra-wideband coupler can be used across all C-band as well as in S and L bands, it is realized at no expense of fabrication complexity while coupling efficiency is maintained. The coupling efficiency can be improved if the grating gap is decreased below 80 nm yet increasing fabrication resolution requirements. Theoretical and experimental analysis is presented for the coupling efficiency versus structure period and gap width while angle alignment tolerance is also investigated.
引用
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页数:9
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