Raman Fingerprint of Aligned Graphene/h-BN Superlattices

被引：98

作者：

Eckmann, Axel ^{[1
]}

Park, Jaesung ^{[2
]}

Yang, Huafeng ^{[1
]}

Elias, Daniel ^{[2
]}

Mayorov, Alexander S. ^{[2
]}

Yu, Geliang ^{[2
]}

Jalil, Rashid ^{[2
]}

Novoselov, Kostya S. ^{[2
]}

Gorbachev, Roman V. ^{[2
]}

Lazzeri, Michele ^{[3
]}

Geim, Andre K. ^{[2
]}

Casiraghi, Cinzia ^{[1
,4
]}

机构：

[1] Univ Manchester, Sch Chem, Manchester, Lancs, England

[2] Univ Manchester, Sch Phys & Astron, Manchester, Lancs, England

[3] Univ Paris 06, CNRS, IMPMC, Paris, France

[4] Free Univ Berlin, Dept Phys, Berlin, Germany

来源：

NANO LETTERS | 2013年 / 13卷 / 11期

关键词：

Graphene; Raman spectroscopy; superlattice; boron nitride; DIRAC FERMIONS; SPECTROSCOPY; DEFECTS;

D O I：

10.1021/nl402679b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene placed on hexagonal-boron nitride (h-BN) experiences a superlattice (Moire) potential, which leads to a strong reconstruction of graphene's electronic spectrum with new Dirac points emerging at sub-eV energies. Here we study the effect of such superlattices on graphene's Raman spectrum. In particular, the 2D Raman peak is found to be exquisitely sensitive to the misalignment between graphene and h-BN lattices, probably due to the presence of a strain distribution with the same periodicity of the Moire potential. This feature can be used to identify graphene superlattices with a misalignment angle smaller than 2 degrees.

引用

页码：5242 / 5246

页数：5

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