Morphology and crystallographic properties of rubrene thin films grown on rnuscovite(001)

被引：7

作者：

Djuric, T. ^{[1
]}

Thierry, A. ^{[2
]}

Grogger, W. ^{[3
]}

Abd Al-Baqi, Sh. M. ^{[4
]}

Sitter, H. ^{[4
]}

Resel, R. ^{[1
]}

机构：

[1] Graz Univ Technol, Inst Solid States Phys, A-8010 Graz, Austria

[2] CNRS, Inst Charles Sadron, Strasbourg, France

[3] Graz Univ Technol, Inst Electron Microscopy, A-8010 Graz, Austria

[4] Univ Linz, Inst Solid State Phys & Semicond, Linz, Austria

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 09期

关键词：

Rubrene; Thin film; Organic semiconductors; TEM; TEMPERATURE; MOLECULES;

D O I：

10.1016/j.physe.2009.06.012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of the organic semiconductor rubrene were deposited on muscovite (0 0 1) substrates by hot wall epitaxy. The morphology of rubrene thin films in combination with their crystallographic properties was characterized by transmission electron microscopy. The initial growth proceeds in a partially wetting regime where amorphous droplets are formed. Through diffusive interactions the droplets merge together in partially crystalline open networks. At a more advanced growth stage, spheruilites are formed and a variety of crystalline morphologies appears. Platelet- and needle-like morphologies can be assigned to the orthorhombic phase of rubrene with the [301] and [110] zone axes, respectively. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1718 / 1722

页数：5

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