Morphology and crystallographic properties of rubrene thin films grown on rnuscovite(001)

被引：7
|
作者：
Djuric, T. [1 ]
Thierry, A. [2 ]
Grogger, W. [3 ]
Abd Al-Baqi, Sh. M. [4 ]
Sitter, H. [4 ]
Resel, R. [1 ]
机构：
[1] Graz Univ Technol, Inst Solid States Phys, A-8010 Graz, Austria
[2] CNRS, Inst Charles Sadron, Strasbourg, France
[3] Graz Univ Technol, Inst Electron Microscopy, A-8010 Graz, Austria
[4] Univ Linz, Inst Solid State Phys & Semicond, Linz, Austria
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 09期
关键词：
Rubrene; Thin film; Organic semiconductors; TEM; TEMPERATURE; MOLECULES;
D O I：
10.1016/j.physe.2009.06.012
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin films of the organic semiconductor rubrene were deposited on muscovite (0 0 1) substrates by hot wall epitaxy. The morphology of rubrene thin films in combination with their crystallographic properties was characterized by transmission electron microscopy. The initial growth proceeds in a partially wetting regime where amorphous droplets are formed. Through diffusive interactions the droplets merge together in partially crystalline open networks. At a more advanced growth stage, spheruilites are formed and a variety of crystalline morphologies appears. Platelet- and needle-like morphologies can be assigned to the orthorhombic phase of rubrene with the [301] and [110] zone axes, respectively. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1718 / 1722
页数：5
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