Thermoelectric properties of materials near the band crossing line in Mg2Sn-Mg2Ge-Mg2Si system

被引：107

作者：

Mao, Jun ^{[1
,2
,3
]}

Kim, Hee Seok ^{[1
,2
]}

Shuai, Jing ^{[1
,2
]}

Liu, Zihang ^{[1
,2
,4
,5
]}

He, Ran ^{[1
,2
]}

Saparamadu, Udara ^{[1
,2
]}

Tian, Fei ^{[1
,2
]}

Liu, Weishu ^{[1
,2
]}

Ren, Zhifeng ^{[1
,2
]}

机构：

[1] Univ Houston, Dept Phys, Houston, TX 77004 USA

[2] Univ Houston, Texas Ctr Superconduct, Houston, TX USA

[3] Univ Houston, Dept Mech Engn, Houston, TX USA

[4] Harbin Inst Technol, Natl Key Lab Precis Hot Proc Met, Harbin 150001, Peoples R China

[5] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

ACTA MATERIALIA | 2016年 / 103卷

关键词：

Mg2Sn-Mg2Ge-Mg2Si; Thermoelectric; Output power; Efficiency; SOLID-SOLUTIONS; FIGURE; MERIT; POWER; MG; BI; ENHANCEMENT; TRANSPORT; GE; SI;

D O I：

10.1016/j.actamat.2015.11.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermoelectric properties of materials with compositions on and near the band crossing line connecting Mg(2)Sn(0.76)sGe(0.22)Sb(0.015) and Mg2Sn0.015Si0.3Sb0.015 in the Mg2Sn-Mg2Ge-Mg2Si system are investigated. Although ZTs are very similar, power factors are different. On the line, the power factor decreases from Mg2Sn0.76Ge0.22Sb0.015 to Mg2Sn0.685Si0.3Sb0.015, and off the line, the power factor also decreases. The output power and energy conversion efficiency are calculated using engineering power factor (PF)(eng) and figure of merit (ZT)(eng). It is shown that although similar energy conversion efficiency of 11% could be achieved for all compositions studied, the output power are different, increasing from similar to 9.1 W cm(-2) for Mg2Sn0.765Si0.3Sb0.015 to similar to 10.3 W cm(-2) for Mg2Sn0.765Ge0.22Sb0.015, due to the different power factors. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：633 / 642

页数：10

共 50 条

[1] Thermoelectric performance of Li doped, p-type Mg2(Ge,Sn) and comparison with Mg2(Si,Sn)
de Boor, J.
Saparamadu, U.
Mao, J.
Dahal, K.
Mueller, E.
Ren, Zhifeng
ACTA MATERIALIA, 2016, 120 : 273 - 280
[2] Thermoelectric properties of binary Mg2Sn and ternary Mg2Sn1-xYx (Y = Si, Ge) with the addition of Cu2S
Rabiu, B. I.
Huang, B.
Luo, X.
Yang, Y. Q.
JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 975
[3] Instability Mechanism in Thermoelectric Mg2(Si,Sn) and the Role of Mg Diffusion at Room Temperature
Duparchy, Amandine
Deshpande, Radhika
Sankhla, Aryan
Ghosh, Sanyukta
Camut, Julia
Park, Sungjin
Park, Sudong
Ryu, Byungki
Mueller, Eckhard
de Boor, Johannes
SMALL SCIENCE, 2025, 5 (03):
[4] Bismuth doping of induction furnace synthesized Mg2Si, Mg2Sn and Mg2Ge thermoelectric compounds
Cahana, Meital
Gelbstein, Yaniv
INTERMETALLICS, 2020, 120
[5] Influence of Sb doping on thermoelectric properties of Mg2Ge materials
Gao, H. L.
Zhu, T. J.
Zhao, X. B.
Deng, Y.
INTERMETALLICS, 2015, 56 : 33 - 36
[6] Importance of relativistic effects in electronic structure and thermopower calculations for Mg2Si, Mg2Ge, and Mg2Sn
Kutorasinski, K.
Wiendlocha, B.
Tobola, J.
Kaprzyk, S.
PHYSICAL REVIEW B, 2014, 89 (11):
[7] Hybrid-Functional and Quasi-Particle Calculations of Band Structures of Mg2Si, Mg2Ge, and Mg2Sn
Byungki Ryu
Sungjin Park
Eun-Ae Choi
Johannes de Boor
Pawel Ziolkowski
Jaywan Chung
Su Dong Park
Journal of the Korean Physical Society, 2019, 75 : 144 - 152
[8] Relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn: Consistent parameterization and prediction of Seebeck coefficients
Shi, Guangsha
Kioupakis, Emmanouil
JOURNAL OF APPLIED PHYSICS, 2018, 123 (08)
[9] Hybrid-Functional and Quasi-Particle Calculations of Band Structures of Mg2Si, Mg2Ge, and Mg2Sn
Ryu, Byungki
Park, Sungjin
Choi, Eun-Ae
de Boor, Johannes
Ziolkowski, Pawel
Chung, Jaywan
Park, Su Dong
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2019, 75 (02) : 144 - 152
[10] Thermoelectric Properties of Mg2(Ge,Sn): Model and Optimization of ZT
Sun, Jifeng
Singh, David J.
PHYSICAL REVIEW APPLIED, 2016, 5 (02):

← 1 2 3 4 5 →