Effect of vanadium doping on structural, dielectric and ferroelectric properties of bismuth titanate (Bi4Ti3O12) ceramics

被引：22

作者：

Badge, Shraddha K. ^{[1
]}

Deshpande, A. V. ^{[1
]}

机构：

[1] Visvesvaraya Natl Inst Technol, Dept Phys, South Ambazari Rd, Nagpur 440010, Maharashtra, India

来源：

CERAMICS INTERNATIONAL | 2019年 / 45卷 / 12期

关键词：

Bismuth titanate; Ferroelectric; Dielectric; XRD; SEM; LARGE REMANENT POLARIZATION; MICROSTRUCTURE; FILMS;

D O I：

10.1016/j.ceramint.2019.05.021

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of vanadium doping on the structural, dielectric and ferroelectric properties of Bi4Ti3O12 (BTO) has been studied. Bi4-x/3Ti3-xVxO12 (x = 0, 0.006, 0.012, 0.018, 0.024 and 0.03 mol%) were prepared using a sol-gel synthesis method and calcined at 400 degrees C for 3 h. All samples were sintered at 950 degrees C for 3 h. The relative density of ceramic samples decreases with the addition of vanadium. The structural analysis confirms that no structural changes occur with doping of vanadium into BTO ceramics. Doping of vanadium into BTO ceramics improves its ferroelectric and dielectric properties.

引用

页码：15307 / 15313

页数：7

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