InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth

被引：0
|
作者：
Tsukamoto, Shiro [1 ]
机构：
[1] Anan Natl Coll Technol, Tokushima 7740017, Japan
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
in-situ; molecular beam epixtaxy; scanning tunnelling microscope; GaAs; InAs; Quantum Dots;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully investigated the self-assembly mechanism for InAs quantum dots (QDs) formed on GaAs(001) by using a unique scanning tunnelling microscope (STM) placed within the molecular beam epitaxy (MBE) growth chamber. The images elucidate the mechanism of QD nucleation, demonstrating directly that not all deposited In is initially incorporated into the lattice, hence providing a large supply of material to rapidly form QDs via islands containing tens of atoms. kinetic Monte Carlo (kMC) simulations based on first-principles calculations show that tiny alloy fluctuations, like atomistic point defects, in the InGaAs wetting layer prior to are crucial in determining nucleation sites.
引用
收藏
页码：605 / 608
页数：4
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