Melting of porous silicon under the action of a nanosecond pulsed high-power ion beam

被引：5

作者：

Kovivchak, V. S. ^{[1
]}

Davletkil'deev, N. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Omsk Div, Omsk 644018, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2009年 / 35卷 / 05期

关键词：

81.05.Cy; 81.05.Rm; 81.05.Zx; 81.07.Bc;

D O I：

10.1134/S1063785009050186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the melting of porous silicon (por-Si) layers under the action of a nanosecond pulsed high-power proton-carbon ion beam. Dimensions of ellipsoidal silicon particles formed as a result of this processing have been determined. The threshold energy density necessary for the melting of por-Si with a porosity of similar to 50% is experimentally evaluated.

引用

页码：446 / 448

页数：3

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