Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays

被引：15

作者：

Chen, Xinman ^{[1
]}

Hu, Wei ^{[2
]}

Wu, Shuxiang ^{[2
]}

Bao, Dinghua ^{[2
]}

机构：

[1] S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 615卷

基金：

高等学校博士学科点专项科研基金;

关键词：

Resistance random access memory; Complementary switching; MgZnO/ZnO heterostructure; Sneak current;

D O I：

10.1016/j.jallcom.2014.06.200

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the reproducible complementary switching based on the exceptional TiN/MgZnO/ZnO/Pt bipolar resistive memory devices. The uniform complementary switching with good endurance was observed after the second electroforming process. The resultant complementary switching of TiN/MgZnO/ZnO/Pt devices were interpreted in view of rupture and recovery of conductive filaments inside MgZnO layer and ZnO layer resulted from the redistribution of oxygen vacancies. The TiN/MgZnO/ZnO/Pt devices with complementary switching characteristics ensure the capability to suppress the sneak current paths of cross-point memories, and have great potential applications for future 3D crossbar memory architecture. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：566 / 568

页数：3

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