Interacting antiferromagnetic and ferroelectric domain structures of multiferroics

被引：18
|
作者：
Gareeva, Z. V. [1 ,2 ]
Zvezdin, A. K. [1 ,3 ]
机构：
[1] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Mol & Crystal Phys, Ufa 450075, Russia
[3] Fdn ISI, I-10133 Turin, Italy
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 2-3期
关键词：
BIFEO3; THIN-FILMS; ROOM-TEMPERATURE; TRANSITIONS;
D O I：
10.1002/pssr.200802282
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The correlation between antiferromagnetic and ferroelectric domain structures in multiferroics has been studied. The role of magnetoelectric interactions in the formation of antiferromagnetic domain structure has been analysed. It has been shown that the major physical mechanism binding antiferromagnetic domains to ferroelectiec ones is the inhomogeneous flexomagnetoelectric interaction of the P-z[(l del)l(2)-l(2)(del l)] type. The dependences illustrating the rearrangement of anti-ferromagnetic domain patterns together with changes of the ferromagnetic domain thickness have been analyzed. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：79 / 81
页数：3
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